ECEN 325 Lab 6 Diode

ECEN 325 - 510

Lab 6: Diodes

Objective:

The purpose of this lab was to investigate the characterization of the diode. A basic diode circuit and a ripple diode circuit were designed. Their behaviors will be compared with simulations, measurements and calculations.

Calculations:

Schematics:

Diode Characterization                                Diode Ripple Characterization              

 

Simulations:

Characteristic Diode  vs.  Simulation

Ripple Diode Transient Simulation – Maximum Peak Voltage

Ripple Diode Transient Simulation – Maximum Ripple

Ripple Diode Transient Simulation – Maximum Current

Characteristic Diode  vs.  Measurement

Ripple Transient Measured

Data Tables:

Ripple Diode

 

Calculated

Simulated

Measured

Resistor (kΩ)

1

1

1

Capacitor (µF)

20

20

20

Voltage Input (V)

3.7

3.7

3.71

Voltage Output (V)

N/A

3.08

3.00

Ripple (Δx in ms)

N/A

1.74

1.77

Discussion:

Each part (calculations, simulations and measurements) were all very aligned for the characteristic diode and the ripple diode circuit. Some differences may be found as a result of non-ideal restraints on the physical circuit vs the simulated circuit. In the simulated portion of the characteristic diode’s graph, we notice that there are only a few points to graph. This causes a rough graph to be plotted in comparison to the measured values, which have just about 7,000 different points. Even if there is a drastic difference between the two graphs, we can still see the same behavior with the two graphs falling short of 0.45 mA for the current. Overall, the values in this lab worked out quite nicely.

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