ECEN 325 Lab 6 Diode
ECEN 325 - 510
Lab 6: Diodes
Objective:
The purpose of this lab was to investigate the characterization of the diode. A basic diode circuit and a ripple diode circuit were designed. Their behaviors will be compared with simulations, measurements and calculations.
Calculations:
Schematics:
Diode Characterization Diode Ripple Characterization
Simulations:
Characteristic Diode vs. Simulation
Ripple Diode Transient Simulation – Maximum Peak Voltage
Ripple Diode Transient Simulation – Maximum Ripple
Ripple Diode Transient Simulation – Maximum Current
Characteristic Diode vs. Measurement
Ripple Transient Measured
Data Tables:
Ripple Diode
|
Calculated |
Simulated |
Measured | |
|
Resistor (kΩ) |
1 |
1 |
1 |
|
Capacitor (µF) |
20 |
20 |
20 |
|
Voltage Input (V) |
3.7 |
3.7 |
3.71 |
|
Voltage Output (V) |
N/A |
3.08 |
3.00 |
|
Ripple (Δx in ms) |
N/A |
1.74 |
1.77 |
Discussion:
Each part (calculations, simulations and measurements) were all very aligned for the characteristic diode and the ripple diode circuit. Some differences may be found as a result of non-ideal restraints on the physical circuit vs the simulated circuit. In the simulated portion of the characteristic diode’s graph, we notice that there are only a few points to graph. This causes a rough graph to be plotted in comparison to the measured values, which have just about 7,000 different points. Even if there is a drastic difference between the two graphs, we can still see the same behavior with the two graphs falling short of 0.45 mA for the current. Overall, the values in this lab worked out quite nicely.
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